ZnO Workshop: Perspectives on ZnO Materials and Devices for Optoelectronics

The wide direct band gap semiconductor ZnO has potential for various applications. The band gap of ZnO of 3.37 eV at room temperature makes the material a promising candidate for optoelectronic devices in the ultraviolet region. With Mg, Cd, Be alloying, the material potentially can emit/absorb lights toward both deeper ultraviolet or visible regions. ZnO appears especially favorable for excitonic lasing applications because of its large exciton binding energy of 60 meV at room temperature. The availability of bulk ZnO substrates offers the possibility of homoepitaxy for the fabrication of various devices.

The objectives of this workshop are:

Identify scientific barriers and possible solutions of ZnO p-type doping and epitaxy for efficient optical devices such as LEDs, lasers, photodetectors, and solar cells.

Recommend future research and development directions that will address government and industrial needs.

 

Organizers:

Chair: Dr. Jianlin Liu, University of California, Riverside

Co-chair: Dr. David Look, Wright State University

Program Committee:

Jianlin Liu, University of California, Riverside

David Look, Wright State University

Michael Gerhold, Army Research Office

Sponsors:

Army Research Office

ZN Technology, Inc.

Bourns College of Engineering, UC Riverside

Workshop: Perspectives on ZnO Materials and Devices for Optoelectronics. Riverside, CA, USA July 7-9, 2010